Planar Monolithics Industries has announced that a patent has been issued; patent No. 10,084,054 on September 25, 2018 "Field Effect Transistor which can be biased to achieve a uniform depletion region" by our consultant and advisor Dr. Alfred Grayzel has been received and the USPTO has published the application electronically Patent Publication No. US-2018-0204925-A1. A copy of the application is available on the PMI website at https://www.pmi-rf.com/technical-papers-written-by-pmi.  This new FET eliminates pinchoff and is therefore considerably more efficient than the current art.


About the Author

Alfred I. Grayzel (M'55- SM'85-LM '92) was born in Brooklyn N.Y. in May 24, 1933. He received a B.A. from Columbia College in N.Y.C. in 1954 and a B.S.E.E. from the Columbia School of engineering in 1955. He received an M. S. E.E. and a Ph.D. in electrical engineering from M.I.T. in 1961 and 1963. He spent 17 years of his career at M.I.T. 's Lincoln Laboratory as a staff member. In 1975 he founded A.I. Grayzel Inc. which manufactured unconditionally stable varactor frequency multipliers and up-converters. The company was acquired by the Anzac Corporation in 1985. He is currently a consultant to PMI, USA.